1. product pro?le 1.1 general description 45 w ldmos power transistor for base station applications at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz. 1.2 features n typical 2-carrier w-cdma performance at frequencies of 2110 mhz and 2170 mhz, a supply voltage of 28 v and an i dq of 405 ma: u average output power = 2.5 w u power gain = 18.5 db (typ) u ef?ciency = 13 % u acpr = - 48 dbc n easy power control n integrated esd protection n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (2000 mhz to 2200 mhz) n internally matched for ease of use n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) blf6g22s-45 power ldmos transistor rev. 02 17 april 2008 product data sheet table 1. typical performance rf performance at t case = 25 c in a common source class-ab production test circuit. mode of operation f v ds p l(av) g p h d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 28 2.5 18.5 13 - 48 [1] caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 2 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor 1.3 applications n rf power ampli?ers for w-cdma base stations and multicarrier applications in the 2000 mhz to 2200 mhz frequency range 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simpli?ed outline graphic symbol 1 drain 2 gate 3 source [1] 1 2 3 sym112 1 3 2 table 3. ordering information type number package name description version blf6g22s-45 - ceramic earless ?anged package; 2 leads sot608b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +13 v t stg storage temperature - 65 +150 c t j junction temperature - 225 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l = 12.5 w (cw) 1.7 k/w
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 3 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the blf6g22s-45 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 405 ma; p l = 45 w (cw); f = 2170 mhz. table 6. characteristics t j = 25 c per section; unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.5 ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 72 ma 1.4 1.9 2.4 v v gsq gate-source quiescent voltage v ds =28v;i d = 300 ma 1.65 2.15 2.65 v i dss drain leakage current v gs =0v; v ds =28v - - 1.5 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v - 12.5 - a i gss gate leakage current v gs = 11 v; v ds = 0 v - - 150 na g fs forward transconductance v ds =10v; i d = 3.5 a - 5 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 2.5 a - 0.2 - w table 7. application information mode of operation: 2-carrier w-cdma; par 7.5 db at 0.01 % probability on ccdf; 3gpp test model 1; 1 to 64 pdpch; f 1 = 2112.5 mhz; f 2 = 2117.5 mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 28 v; i dq = 405 ma; t case = 25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average output power - 2.5 - w g p power gain p l(av) = 2.5 w 17.3 18.5 19.7 db h d drain ef?ciency p l(av) = 2.5 w 10.5 13 - % acpr adjacent channel power ratio p l(av) = 2.5 w - - 48 - 45 dbc
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 4 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor v ds =28v; i dq = 405 ma; f = 2170 mhz. fig 1. one-tone cw power gain and drain ef?ciency as functions of load power; typical values 001aah604 p l (w) 060 40 20 50 30 10 g p 16 18 14 20 22 g p (db) 12 h d h d (%) 30 40 20 50 60 10 v ds =28v; i dq = 405 ma; f 1 = 2170 mhz; f 2 = 2170.1 mhz. v ds = 28 v; i dq = 405 ma; f 1 = 2170 mhz; f 2 = 2170.1 mhz. fig 2. two-tone cw power gain and drain ef?ciency as functions of peak envelope load power; typical values fig 3. intermodulation distortion as a function of peak envelope load power; typical values 001aah605 p l(pep) (w) 06070 40 20 50 30 10 g p 16 18 20 g p (db) 14 17 19 15 h d h d (%) 30 40 20 50 60 0 10 001aah606 p l(pep) (w) 06070 40 20 50 30 10 imd5 imd3 imd7 - 50 - 30 - 10 imd (dbc) - 70 - 40 - 20 - 60
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 5 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor 8. test information v ds =28v; i dq = 405 ma; f 1 = 2162.5 mhz; f 2 = 2167.5 mhz; carrier spacing 5 mhz. v ds = 28 v; i dq = 405 ma; f 1 = 2162.5 mhz; f 2 = 2167.5 mhz; carrier spacing 5 mhz. fig 4. 2-carrier w-cdma power gain and drain ef?ciency as functions of average load power; typical values fig 5. 2-carrier w-cdma adjacent power channel ratio as a function of average load power; typical values p l(av) (w) 010 8 46 2 001aah607 17 18 16 19 20 g p (db) 15 15 20 10 25 30 h d (%) 5 g p h d p l(av) (w) 010 8 46 2 001aah608 - 50 - 40 - 30 - 55 - 45 - 35 acpr (dbc) - 60 see t ab le 8 for list of components. fig 6. test circuit for operation at 2110 mhz and 2170 mhz 001aah609 c3 c4 c2 c1 c7 c8 c9 c18 c17 c10 c11 c12 c13 c14 c15 c16 c5 c6 r1 v gg input 50 w output 50 w v dd
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 6 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor [1] american technical ceramics type 100a or capacitor of same quality. [2] american technical ceramics type 100b or capacitor of same quality. striplines are on a double copper-clad rogers duroid 5880 printed-circuit board (pcb) with e r = 2.2 and thickness = 0.79 mm. see t ab le 8 for list of components. fig 7. component layout for 2110 mhz and 2170 mhz test circuit table 8. list of components for test circuit, see figure 6 and figure 7 . component description value remarks c1, c2, c17, c18 multilayer ceramic chip capacitor 6.8 pf [1] c3, c15 tantalum capacitor 10 m f c4, c5 multilayer ceramic chip capacitor 1.5 m f c6, c12 multilayer ceramic chip capacitor 10 pf [2] c7 multilayer ceramic chip capacitor 0.5 pf [2] c8 multilayer ceramic chip capacitor 1.2 pf [2] c9 multilayer ceramic chip capacitor 1.0 pf [2] c10, c11 multilayer ceramic chip capacitor 100 nf c13 multilayer ceramic chip capacitor 220 nf c14 multilayer ceramic chip capacitor 4.7 m f c16 electrolytic capacitor 220 m f, 63 v r1 chip resistor 5.6 w 001aah610 c3 c4 c6 r1 c2 c1 c7 c8 c9 c18 c17 c16 c15 c14 c10 c12 c11 c13 c5
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 7 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor 9. package outline fig 8. package outline sot608b references outline version european projection issue date iec jedec jeita sot608b sot608b 06-11-27 06-12-06 unit a mm 4.62 3.76 7.24 6.99 0.15 0.10 10.29 10.03 10.21 10.01 10.29 10.03 1.14 0.89 1.70 1.35 10.24 9.98 0.51 b dimensions (mm dimensions are derived from the original inch dimensions) ceramic earless flanged package; 2 leads 0 5 mm scale c d 10.21 10.01 d 1 e e 1 f h 15.75 14.73 q u 1 u 2 10.24 9.98 inch 0.182 0.148 0.285 0.275 0.006 0.004 0.405 0.395 0.402 0.394 0.405 0.395 0.045 0.035 0.067 0.053 0.403 0.393 0.020 0.402 0.394 0.620 0.580 0.403 0.393 w 1 m w 1 a m 1 2 b h a 3 d a f d 1 u 1 e e 1 u 2 c q
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 8 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous waveform dpch dedicated physical channel imd intermodulation distortion ldmos laterally diffused metal-oxide semiconductor par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 10. revision history document id release date data sheet status change notice supersedes blf6g22s-45_2 20080417 product data sheet - blf6g22-45_blf6g22s-45_1 modi?cations: ? the combined data sheet is split up into two separate data sheets. ? t ab le 1 and t ab le 7 : acpr values changed. blf6g22-45_blf6g22s-45_1 20080219 preliminary data sheet - -
blf6g22s-45_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 17 april 2008 9 of 10 nxp semiconductors blf6g22s-45 power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors blf6g22s-45 power ldmos transistor ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 17 april 2008 document identifier: blf6g22s-45_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 contact information. . . . . . . . . . . . . . . . . . . . . . 9 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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